activity
20062023
most citedDemonstration of a mid infrared silicon Raman amplifier

133 citations · 215 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2023★ 17 cited

Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS/WSe heterobilayer

Suman Chatterjee, Medha Dandu, Pushkar Dasika +6

Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its…

physics.optics2022★ 14 cited

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Rahul Debnath, Shaili Sett, Sudipta Kundu +5

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist…

physics.app-ph2020★ 5 cited

Origin of selective enhancement of sharp defect emission lines in monolayer WSe on rough metal substrate

Raghav Chaudhary, Varun Raghunathan, Kausik Majumdar

The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emissio…

cond-mat.mtrl-sci2019★ 2 cited

Evolution of high-frequency Raman modes and their doping dependence in twisted bilayer MoS2

Rahul Debnath, Indrajit Maity, Manish Jain +1

Twisted van der Waals heterostructures unravel a new platform to study strongly correlated quantum phases. The interlayer coupling in these heterostructures is sensitive to twist a…

cond-mat.mes-hall2019★ 29 cited

Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure

Medha Dandu, Rabindra Biswas, Sarthak Das +5

The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultra-…

physics.optics2007★ 133 cited

Demonstration of a mid infrared silicon Raman amplifier

Varun Raghunathan, David Borlaug, Robert Rice +1

We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm…