activity
20072017
most citedSpin-orbit coupling and phase-coherence in InAs nanowires

89 citations · 227 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2017★ 16 cited

Experimental determination of Rashba and Dresselhaus parameters and -factor anisotropy via Shubnikov-de Haas oscillations

F. Herzog, H. Hardtdegen, Th. Schaepers +2

The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patt…

cond-mat.mes-hall2014★ 6 cited

Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures

A. A. Zhukov, Ch. Volk, A. Winden +2

In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged at…

cond-mat.mes-hall2013

The electronic transport of top subband and disordered sea in InAs nanowire in presence of a mobile gate

A. A. Zhukov, Ch. Volk, A. Winden +2

We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (\,k) in the presence of a charged tip of an atomic force…

cond-mat.mes-hall2012★ 8 cited

Scanning tunneling microscopy with InAs nanowire tips

Kilian Flöhr, Kamil Sladek, H. Yusuf Günel +5

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires m…

cond-mat.mes-hall2012

Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions

H. Y. Gunel, I. E. Batov, H. Hardtdegen +6

We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-na…

cond-mat.mes-hall2010★ 89 cited

Spin-orbit coupling and phase-coherence in InAs nanowires

S. Estévez Hernández, M. Akabori, K. Sladek +7

We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctua…