S. Izumi

most citedDoping-dependence of nodal quasiparticle properties in high-

T_{c}

cuprates studied by laser-excited angle-resolved photoemission spectroscopy

14 citations · 14 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2018

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ( $0001$ ) Si-face and ( $0001$ ) C-face by using a new Si-O-C interatomic potential

So Takamoto, Takahiro Yamasaki, Takahisa Ohno +3

Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO $_{2}$ interface has been…

cond-mat.mtrl-sci2018

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

So Takamoto, Takahiro Yamasaki, Jun Nara +4

Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper de…

cond-mat.supr-con2007★ 14 cited

Doping-dependence of nodal quasiparticle properties in high- $T_{c}$ cuprates studied by laser-excited angle-resolved photoemission spectroscopy

K. Ishizaka, T. Kiss, S. Izumi +11

We investigate the doping dependent low energy, low temperature ( $T$ = 5 K) properties of nodal quasiparticles in the d-wave superconductor Bi $_{2.1}$ Sr $_{1.9}$ CaCu $_{2}$ O $_{8 + δ}$ (B…

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and (0001) C-face by using a new Si-O-C interatomic potential

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

Doping-dependence of nodal quasiparticle properties in high-Tc​ cuprates studied by laser-excited angle-resolved photoemission spectroscopy

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ( $0001$ ) Si-face and ( $0001$ ) C-face by using a new Si-O-C interatomic potential

Doping-dependence of nodal quasiparticle properties in high- $T_{c}$ cuprates studied by laser-excited angle-resolved photoemission spectroscopy