2 papers
physics.ins-det2026
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Jiří Kroll, Pavla Federičová, Jan Chochol +15
4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for rad…
physics.ins-det2026
Development of Segmented 4H-SiC LGADs
Vojtěch Kráčmar, Jan Chochol, Adam Klimsza +11
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle d…