60 citations · 228 across the 13 of their papers we have counts for
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Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices
Thomas Descamps, Feng Liu, Sebastian Kindel +9
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspect…
Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout
Patrick Zellekens, Russell Deacon, Pujitha Perla +4
Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an act…
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…
Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Patrick Zellekens, Russell Deacon, Pujitha Perla +10
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such…
MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures
Nicholas A. Güsken, Torsten Rieger, Benjamin Bennemann +4
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreig…
All-electrical time-resolved spin generation and spin manipulation in n-InGaAs
I. Stepanov, S. Kuhlen, M. Ersfeld +2
We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at ze…