2 papers
cond-mat.mtrl-sci2026
Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi +5
The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepita…
cond-mat.mtrl-sci2024
Ultra-thin strain-relieving SiGe layers enabling III-V epitaxy on Si
Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel +4
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new ur…