activity
20242026
most cited20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

1 citations · 1 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2026

High-speed time-series prediction using compact memristor circuits with adjustable dynamics

Dániel Molnár, János Volk, Tímea Nóra Török +5

TaO nonvolatile memristors are used as compact, traceable, and well-controllable dynamic reservoir computing layers to perform time-series prediction tasks. The strongly vo…

physics.app-ph20261 cited

20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

Alexandre Baigol, Ruben Hamming-Green, Paul Uriarte Vicandi +8

Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing archi…

cond-mat.mes-hall2025

VO oscillator circuits optimized for ultrafast, 100 MHz-range operation

Zsigmond Pollner, Tímea Nóra Török, László Pósa +9

Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization…

cond-mat.mes-hall2024

Benchmarking stochasticity behind reproducibility: denoising strategies in TaO memristors

Anna Nyáry, Zoltán Balogh, Botond Sánta +5

Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial s…

cond-mat.mes-hall2024

Neural information processing and time-series prediction with only two dynamical memristors

Dániel Molnár, Tímea Nóra Török, János Volk +9

Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers la…