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cond-mat.mes-hall2026
Displacement-Field-Induced Ionization of Defect States in High-Quality hBN
Ilia Begichev, Daria Belotcerkovtceva, Iakov Reznikov +10
Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic an…
cond-mat.mes-hall2026
Ultra-small-angle graphene twistronics with monolayer spacers: From interlayer hybridisation and moiré effects to high-temperature magnetotransport oscillations
Benjamin Fuller, Haowei Fan, Agustin Montemurro +4
Based on the analysis of moiré superlattice characteristics and interlayer hybridisation in small-angle twisted graphene multilayers with a monolayer hexagonal boron nitride (hBN)…