12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control

DaKyung Lee, Liyang Jin, Jungmin Lee +3

We report cryogenic characterization and compact modeling of GlobalFoundries (GF) 12LP regular-voltage-threshold (RVT) n- and p-FinFETs, measured from 292 K to 10 mK. Both devices…