most citedTuning the polarization-induced free hole density in nanowires graded from GaN to AlN

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cond-mat.mtrl-sci2014★ 21 cited

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

A. T. M. Golam Sarwar, Santino D. Carnevale, Thomas F. Kent +3

We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy.…