Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Marion J. L. Sourribes, Ivan Isakov, Marina Panfilova +2

We report the growth of InAs${}_{1-x}$Sb${}_x$ nanowires ($0\le x\le 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease…