3 papers
cond-mat.mtrl-sci2026
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…
cond-mat.mtrl-sci2026
Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
Kira J. Martin, Autumn Y. Lee, Pranav Mahaadev +6
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizi…
cond-mat.mtrl-sci2026
Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials
Ashlee M. García, Byron D. Aguilar, William J. Doyle +4
Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel de…