In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with $<10^{-22}$ A Leakage Determined by Single-Electron Counting

Katsuhiko Nishiguchi, Toshiaki Hayashi, Kensaku Chida +3

Ultra-low-leakage memories are attracting increasing attention for in-memory sensing and computing. However, achieving sufficiently long retention in silicon memories for analog si…