404 citations · 679 across the 3 of their papers we have counts for
5 papers
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke, Momme Winkelnkemper, Abdallah Qteish +3
We have derived consistent sets of band parameters (band gaps, crystal field-splittings, band gap deformation potentials, effective masses, Luttinger and EP parameters) for AlN, Ga…
Exact-exchange based quasiparticle energy calculations for the band gap, effective masses and deformation potentials of ScN
Abdallah Qteish, Patrick Rinke, Matthias Scheffler +1
The band gaps, longitudinal and transverse effective masses, and deformation potentials of ScN in the rock-salt structure have been calculated employing G0W0-quasiparticle calculat…
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
Patrick Rinke, Abdallah Qteish, Momme Winkelnkemper +3
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV…
Role of semicore states in the electronic structure of group-III nitrides: An exact exchange study
A. Qteish, A. I. Al-Sharif, M. Fuchs +3
The bandstructure of the zinc-blende phase of AlN, GaN, InN is calculated employing the exact-exchange (EXX) Kohn-Sham density-functional theory and a pseudopotential plane-wave ap…
Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound semiconductors
Patrick Rinke, Abdallah Qteish, Joerg Neugebauer +2
We report quasiparticle-energy calculations of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group-III-nitrides. By applyi…