A. Sacchi

p-type oxide contact layers such as Cr $_{2}$ O $_{3}$ and NiO are attracting increasing interest in pn-heterojunctions with n-type monoclinic $β$ -Ga $_{2}$ O $_{3}$ for high-power electronic de…

cond-mat.mtrl-sci2026

Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy

Dagny Sacksteder, Anna Sacchi, Renae Gannon +4

NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that dimi…

cond-mat.mtrl-sci2026

High-Temperature Hydrogen Sensors Based on Gallium Oxide Heterojunction Diodes

William A. Callahan, Kingsley Egbo, Anna Sacchi +5

Long-term, high temperature operation of Ga2O3 devices is a crucial hurdle that must be overcome before widespread adoption of the technology can be achieved, but is largely absent…

cond-mat.mtrl-sci2026

Revealing the Atomic Structure of NiO/Ga $_{2}$ O $_{3}$ Interfaces

Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5

NiO/Ga $_{2}$ O $_{3}$ heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of Ga $_{2}$ O $_{3}$ an…

cond-mat.mtrl-sci2026

Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut

M. Brooks Tellekamp, Drew Haven, David Joyce +7

The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry $β -Ga_{2} O_{3}$ , where anisotropy impacts bulk and thin film synthesis, material pr…

physics.app-ph2026

Autonomous Reliability Qualification of Ga $_{2}$ O $_{3}$ -based diode sensors via Safe Active Learning

Davi Febba, William A. Callahan, Anna Sacchi +1

Ultra-wide bandgap (UWBG) Ga $_{2}$ O $_{3}$ is a promising semiconductor for high-power and high-temperature electronics. Reliable qualification of these devices under extreme operating…

physics.app-ph2023★ 10 cited

Phase-selective growth of $κ$ - vs $β$ -Ga $_{2}$ O $_{3}$ and (In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

A. Ardenghi, O. Bierwagen, J. Lähnemann +4

Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga $_{2}$ O $_{3}$ an interesting material for multiple applications, while In-incorporation int…

Revealing epitaxial relationships at Ga2​O3​ interfaces with p-type oxides

Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy

High-Temperature Hydrogen Sensors Based on Gallium Oxide Heterojunction Diodes

Revealing the Atomic Structure of NiO/Ga2​O3​ Interfaces

Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut

Autonomous Reliability Qualification of Ga2​O3​-based diode sensors via Safe Active Learning

Phase-selective growth of κ- vs β-Ga2​O3​ and (Inx​Ga1−x​)2​O3​ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Revealing epitaxial relationships at Ga $_{2}$ O $_{3}$ interfaces with p-type oxides

Revealing the Atomic Structure of NiO/Ga $_{2}$ O $_{3}$ Interfaces

Autonomous Reliability Qualification of Ga $_{2}$ O $_{3}$ -based diode sensors via Safe Active Learning

Phase-selective growth of $κ$ - vs $β$ -Ga $_{2}$ O $_{3}$ and (In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy