Electron transport in a 1.6~nm-thick double-gated (100) silicon nanosheet: A theoretical study accounting for phonon confinement and remote-phonon scattering

Shoaib Mansoori, Bimin Cai, Edward Chen +2

We study theoretically electron transport in an top-and bottom-gated (100) 1.6 nm-thin silicon nanosheet with SiO2/HfO2 gate stacks, focusing on the intrinsic physical processes th…