1k citations · 2.1k across the 15 of their papers we have counts for
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Strain-stabilized altermagnetism and conductivity anisotropy in FeSb2
Masoumeh Davoudiniya, Alyssa M. Kennedy, Amy Y. Liu +1
We show that FeSb2 experiences a transition from a conventional antiferromagnet to an altermagnet when tensile strain is applied. In the altermagnetic phase, the lifted Kramers deg…
Decoding the Micromagnetic Hamiltonian from Magnetic Fingerprints
Bradley J. Fugetta, Anqi Liu, Kai Liu +2
Extracting intrinsic magnetic Hamiltonians directly from magnetometry is challenging due to the high dimensionality of the parameter space and the degeneracy induced by ensemble av…
Machine-Learning Recognition of Dzyaloshinskii-Moriya Interaction from Magnetometry
Bradley J. Fugetta, Zhijie Chen, Dhritiman Bhattacharya +4
The Dzyaloshinskii-Moriya interaction (DMI), which is the antisymmetric part of the exchange interaction between neighboring local spins, winds the spin manifold and can stabilize…
Effect of doping on lattice instabilities of single-layer 1H-TaS2
Oliver R. Albertini, Amy Y. Liu, Matteo Calandra
Recent ARPES measurements of single-layer 1H-TaS2 grown on Au(111) suggest strong electron doping from the substrate. In addition, STM/STS measurements on this system show suppress…
Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS: Detection of the commensurate charge density wave phase through Raman scattering
Oliver R. Albertini, Rui Zhao, Rebecca L. McCann +5
We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS for various thicknesses in the high-temperature (undistorte…
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Marcio Fontana, Tristan Deppe, Anthony K. Boyd +4
Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole con…