3 papers
cond-mat.mes-hall2026
On the electronic and vibrational dimensionality of nanometer-scale silicon structures
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
We discuss the problem of assessing the electronic and vibrational dimensionality of a semiconductor nanostructure: How thin and/or wide must a nanostructure be in order to induce…
cond-mat.mes-hall2026
Electron transport in a 1.6~nm-thick double-gated (100) silicon nanosheet: A theoretical study accounting for phonon confinement and remote-phonon scattering
Shoaib Mansoori, Bimin Cai, Edward Chen +2
We study theoretically electron transport in an top-and bottom-gated (100) 1.6 nm-thin silicon nanosheet with SiO2/HfO2 gate stacks, focusing on the intrinsic physical processes th…
cond-mat.mes-hall2026
On the static dielectric constant of thin dielectrics in extremely scaled silicon nanosheet transistors
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
We argue that the static dielectric constant of small (thin and/or narrow) semiconductor and insulator nanostructures depends strongly on the their environment. We do so by conside…