5 papers
First-Principles Calculations of the Electron-Hole-Pair Creation Energy in Semiconductors and Dielectrics
Dallin O. Nielsen, Massimo V. Fischetti
We present first-principles calculations of the electron-hole-pair creation energy in semiconductors and dielectrics, focusing in particular on AlN, 3C-SiC, 4H-SiC, Si, and SiO2. W…
On the electronic and vibrational dimensionality of nanometer-scale silicon structures
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
We discuss the problem of assessing the electronic and vibrational dimensionality of a semiconductor nanostructure: How thin and/or wide must a nanostructure be in order to induce…
Electron transport in a 1.6~nm-thick double-gated (100) silicon nanosheet: A theoretical study accounting for phonon confinement and remote-phonon scattering
Shoaib Mansoori, Bimin Cai, Edward Chen +2
We study theoretically electron transport in an top-and bottom-gated (100) 1.6 nm-thin silicon nanosheet with SiO2/HfO2 gate stacks, focusing on the intrinsic physical processes th…
On the static dielectric constant of thin dielectrics in extremely scaled silicon nanosheet transistors
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
We argue that the static dielectric constant of small (thin and/or narrow) semiconductor and insulator nanostructures depends strongly on the their environment. We do so by conside…
Thermalization of radiation-induced electrons in wide-bandgap materials: A first-principles approach
Dallin O. Nielsen, Massimo V. Fischetti
The present study is concerned with simulating the thermalization of high-energy charge carriers (electrons and/or electron-hole pairs), generated by ionizing radiation, in diamond…