2 papers
cond-mat.mtrl-sci2026
Controlling catalyst agglomeration in high-density unordered III-V nanowire growth using Au colloid solutions
Chris Yannic Bohlemann, Pavithira Manoharan, Helene Reichel +4
III-V semiconductor nanowires (NWs) are a promising platform for optoelectronic and photoelectrochemical applications, where device performance strongly depends on NW density and s…
cond-mat.mtrl-sci2016
Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon
Thomas Hannappel, Oliver Supplie, Sebastian Bruckner +3
GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structur…