most citedHigh-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric

21 citations · 21 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2008★ 21 cited

High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric

Marcus Rinkiö, Andreas Johansson, Marina Y. Zavodchikova +4

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to…