High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric

Marcus Rinkiö, Andreas Johansson, Marina Y. Zavodchikova +4

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to…