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cond-mat.mtrl-sci2026
Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact schemes used in…
cond-mat.mtrl-sci2026
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
Maria Mendes Martins, Piyush Kumar, Marianne E. Bathen +5
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially gr…