High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

Chandan Samanta, Elia Palmese, Ziyu Ouyang +3

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic syst…