On the $\mathrm{I}{\mathrm{n}}_{\mathrm{x}}\mathrm{G}{\mathrm{a}}_{1-\mathrm{x}}\mathrm{As}$ channel noise in InP HEMTs from 4 K to 300 K

Junjie Li, Justin H. Chen, Austin J. Minnich +1

The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga…