2 papers
cond-mat.mes-hall2026
Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots
Ron Nodel, David W. Kanaar, Connor Nasseraddin +5
Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge s…
cond-mat.mes-hall2026
Gate Control of g-factor in Germanium Quantum Dots: A Strain-Based Explanation
Mu Niu, Adrian Culver, Johnathan Bryan +3
The g-factor is a key parameter governing the behavior of semiconductor spin qubits, as it directly determines the qubit frequency and its sensitivity to electrical and magnetic no…