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cond-mat.mtrl-sci2008★ 244 cited
Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
S. H. Chang, J. S. Lee, S. C. Chae +5
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond…
cond-mat.mtrl-sci2008★ 14 cited
Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels
Chunli Liu, S. C. Chae, S. H. Chang +8
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting fi…