activity
20062009
most citedPercolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

244 citations · 376 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2009★ 47 cited

Large 1/f noise of unipolar resistance switching and its percolating nature

S. B. Lee, S. Park, J. S. Lee +8

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral de…

cond-mat.mtrl-sci2009★ 38 cited

Predictability of reset switching voltages in unipolar resistance switching

S. B. Lee, S. C. Chae, S. H. Chang +1

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) cu…

cond-mat.mtrl-sci2008★ 244 cited

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

S. H. Chang, J. S. Lee, S. C. Chae +5

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond…

cond-mat.mtrl-sci2008★ 14 cited

Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels

Chunli Liu, S. C. Chae, S. H. Chang +8

We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting fi…

cond-mat.mtrl-sci2006★ 33 cited

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

C. Liu, S. H. Chang, T. W. Noh +5

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) s…