83 citations · 528 across the 22 of their papers we have counts for
18 papers · 1 filter
Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Jieyuan Song, Thomas Scheike, Cong He +5
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresi…
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions
Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa +1
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from l…
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions
Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa +1
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at roo…
Spin Hall effect in a spin-1 chiral semimetal
Ke Tang, Yong-Chang Lau, Kenji Nawa +7
Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal…
Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
Ke Tang, Zhenchao Wen, Yong-Chang Lau +3
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited…
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Thomas Scheike, Qingyi Xiang, Zhenchao Wen +4
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunn…
Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
Qingyi Xiang, Yoshio Miura, Muftah Al-Mahdawi +8
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access m…
Tunability of domain structure and magnonic spectra in antidot arrays of Heusler alloy
Sougata Mallick, Sucheta Mondal, Takeshi Seki +8
Materials suitable for magnonic crystals demand low magnetic damping and long spin wave (SW) propagation distance. In this context Co based Heusler compounds are ideal candidates f…
Spin-charge conversion in NiMnSb Heusler alloy films
Zhenchao Wen, Zhiyong Qiu, Sebastian Tolle +7
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures which exhibit high spin polarization and yield huge magneto…
Tunable magnetization relaxation of Fe_{2}Cr_{1-x}Co_{x}Si half-metallic Heusler alloys by band structure engineering
Shikun He, Yifan Liu, Yuhong Zheng +8
We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy FeCrCo_Si (FCCS) thin films using broad…
Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces
Qingyi Xiang, Zhenchao Wen, Hiroaki Sukegawa +5
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly throug…
Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures
Zhenchao Wen, Hiroaki Sukegawa, Takeshi Seki +3
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. H…
Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy
Zhenchao Wen, Jason Paul Hadorn, Jun Okabayashi +5
The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning t…
Spin-orbit torque in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO epitaxial magnetic heterostructures
Zhenchao Wen, Junyeon Kim, Hiroaki Sukegawa +2
We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpe…
A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance
Zhenchao Wen, Hiroaki Sukegawa, Takao Furubayashi +6
An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(0…
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates
Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai +2
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films wi…
Confirmation of room-temperature long range magnetic order in GaN:Mn
Y. H. Zhang, Z. Y. Lin, F. F. Zhang +11
We propose a method for nano-scale characterization of long range magnetic order in diluted magnetic systems to clarify the origins of the room temperature ferromagnetism. The GaN:…
Effects of current on nanoscale ring-shaped magnetic tunnel junctions
Hong-Xiang Wei, Jiexuan He, Zhen-Chao Wen +3
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density…