activity
20032026
most citedGrowth and properties of strained VOx thin films with controlled stoichiometry

141 citations · 652 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2026

Magneto-optical evidence for single-crystal-like magnetic switching of epitaxial antiferromagnetic LaFeO3 films

A. Rieche, W. Hoppe, C. Körner +11

Strained epitaxial films of the antiferromagnetic orthoferrite LaFeO3 offer a promising platform for antiferromagnetic spintronics, yet their magnetic switching behavior and domain…

cond-mat.mtrl-sci2020★ 1 cited

Growth-sequence-dependent interface magnetism of SrIrO - LaSrMnO bilayers

L. Bergmann, P. Düring, S. Agrestini +9

Bilayers of the oxide 3d ferromagnet LaSrMnO (LSMO) and the 5d paramagnet SrIrO (SIO) with large spin-orbit coupling (SOC) have been investigated regard…

cond-mat.mtrl-sci2017★ 24 cited

Electronic signature of the vacancy ordering in NbO (Nb3O3)

A. K. Efimenko, N. Hollmann, K. Hoefer +15

We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as w…

cond-mat.mtrl-sci2016★ 65 cited

Fe3O4 thin films: controlling and manipulating an elusive quantum material

X. H. Liu, C. F. Chang, A. D. Rata +2

Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin film applications. The theoret…

cond-mat.mtrl-sci2016★ 11 cited

Dynamic atomic reconstruction: how Fe3O4 thin films evade polar catastrophe for epitaxy

C. F. Chang, Z. Hu, S. Klein +10

Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of…

cond-mat.mtrl-sci2016★ 1 cited

Termination control of magnetic coupling at a complex oxide interface

S. Das, A. D. Rata, I. V. Maznichenko +13

Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with…