1 citations · 1 across the 3 of their papers we have counts for
9 papers
Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS
Cameron Jones, Jonathan Y. Huang, Santiago Serrano +13
Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely a…
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Scalable quantum current source on commercial CMOS process technology
Ajit Dash, Suyash Pati Tripathi, Dimitrios Georgakopoulos +17
Many quantum technologies require a precise electrical current standard that can only be achieved with expensive cryogenics, or through the secondary standards, such as resistance…
A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
Wee Han Lim, Tuomo Tanttu, Tony Youn +12
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance toward…