57 citations · 120 across the 5 of their papers we have counts for
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Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization
Pavel Rodin, Andrey Minarsky, Igor Grekhov
We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si -- structures. In nonlinear dynamics terms, this mo…
Impact ionization fronts in semiconductors: superfast propagation due to "nonlocalized" preionization
Pavel Rodin, Andey Minarsky, Igor Grekhov
We discuss a new mode of ionization front passage in semiconductor structures. The front of avalanche ionization propagates into an intrinsic semiconductor with a constant electric…
Theory of superfast fronts of impact ionization in semiconductor structures
Pavel Rodin, Ute Ebert, Andrey Minarsky +1
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds…
Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front
Pavel Rodin, Igor Grekhov
We discuss the dynamic impact ionization breakdown of high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization…
Tunneling-assisted impact ionization fronts in semiconductors
P. Rodin, U. Ebert, W. Hundsdorfer +1
We propose a novel type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numeri…