57 citations · 197 across the 11 of their papers we have counts for
8 papers · 1 filter
The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n junction diode
Aleksander Rozkhov, Mikhail Ivanov, Pavel Rodin
We present experimental evidence and physics-based simulations of the lock-on effect in high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage r…
Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization
Pavel Rodin, Andrey Minarsky, Igor Grekhov
We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si -- structures. In nonlinear dynamics terms, this mo…
Impact ionization fronts in semiconductors: superfast propagation due to "nonlocalized" preionization
Pavel Rodin, Andey Minarsky, Igor Grekhov
We discuss a new mode of ionization front passage in semiconductor structures. The front of avalanche ionization propagates into an intrinsic semiconductor with a constant electric…
Theory of superfast fronts of impact ionization in semiconductor structures
Pavel Rodin, Ute Ebert, Andrey Minarsky +1
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds…
Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front
Pavel Rodin, Igor Grekhov
We discuss the dynamic impact ionization breakdown of high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization…
Theory of traveling filaments in bistable semiconductor structures
Pavel Rodin
We present a generic nonlinear model for current filamentation in semiconductor structures with S-shaped current-voltage characteristics. The model accounts for Joule self-heating…