6 papers
Ferroelectric dynamic-field-driven nucleation and growth model for predictive materials-to-circuit co-design
Yi Liang, Soohyeon Kim, Tony Chiang +8
Real ferroelectric devices operate under mixed and distorted time-varying voltages, yet the standard nucleation-growth frameworks used to interpret ferroelectric switching - most n…
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Yi Liang, Pat Kezer, John T. Heron
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often un…
Intertwined polar, chiral, and ferro-rotational orders in a rotation-only insulator
Weizhe Zhang, June Ho Yeo, Xiaoyu Guo +8
Intertwined orders refer to strongly coupled and mutually dependent orders that coexist in correlated electron systems, often underpinning key physical properties of the host mater…
Material-Limited Switching in Nanoscale Ferroelectrics
Tony Chiang, John J. Plombon, Megan K. Lenox +8
The ferroelectric switching speed has been experimentally obfuscated by the interaction between the measurement circuit and the ferroelectric switching itself. This has prohibited…
Chemically-Disordered Transparent Conductive Perovskites with High Crystalline Fidelity
Saeed S. I. Almishal, Pat Kezer, Yasuyuki Iwabuchi +16
This manuscript presents a working model linking chemical disorder and transport properties in correlated-electron perovskites with high-entropy formulations and a framework to act…
Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers
Sieun Chae, Nocona Sanders, Kelsey A. Mengle +8
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classif…