4 papers
Ferroelectric dynamic-field-driven nucleation and growth model for predictive materials-to-circuit co-design
Yi Liang, Soohyeon Kim, Tony Chiang +8
Real ferroelectric devices operate under mixed and distorted time-varying voltages, yet the standard nucleation-growth frameworks used to interpret ferroelectric switching - most n…
Broad-Range Tuning of Ferroelectric Switching of LaxBi1-xFeO3 Epitaxial Films via Digital Doping using Off-Axis Co-Sputtering
Katelyn Lazareno, Christopher Chae, Becky Haight +7
To investigate the scope of ferroelectric behavior in La-substituted BiFeO3 films, LaxBi1-xFeO3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO3(001) and DyS…
Material-Limited Switching in Nanoscale Ferroelectrics
Tony Chiang, John J. Plombon, Megan K. Lenox +8
The ferroelectric switching speed has been experimentally obfuscated by the interaction between the measurement circuit and the ferroelectric switching itself. This has prohibited…
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…