67 citations · 138 across the 4 of their papers we have counts for
4 papers
Mapping of ion beam induced current changes in FinFETs
C. D. Weis, A. Schuh, A. Batra +8
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20…
Single-atom doping for quantum device development in diamond and silicon
C. D. Weis, A. Schuh, A. Batra +10
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fl…
Concept of deterministic single ion doping with sub-nm spatial resolution
J. Meijer, T. Vogel, B. Burchard +9
We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of th…
Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon
S. -J. Park, A. Persaud, J. A. Liddle +5
We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates…