51 citations · 85 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2009★ 22 cited
Critical issues in the formation of quantum computer test structures by ion implantation
T. Schenkel, C. C. Lo, C. D. Weis +3
The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the deve…
cond-mat.other2008★ 12 cited
Mapping of ion beam induced current changes in FinFETs
C. D. Weis, A. Schuh, A. Batra +8
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20…
cond-mat.other2008★ 51 cited
Single-atom doping for quantum device development in diamond and silicon
C. D. Weis, A. Schuh, A. Batra +10
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fl…