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physics.ins-det2021★ 31 cited
A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak
Edward Van Sieleghem, Andreas Süss, Pierre Boulenc +5
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 m CMOS technology is presented. The SPAD has a depleted absorption vo…
physics.ins-det2008★ 6 cited
Cold performance tests of blocked-impurity-band Si:As detectors developed for DARWIN
Stephan M. Birkmann, Jutta Stegmaier, Ulrich Groezinger +10
We report first results of laboratory tests of Si:As blocked-impurity-band (BIB) mid-infrared (4 to 28 um) detectors developed by IMEC. These prototypes feature 88 pixels hybridize…