activity
20072022
most citedField Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

212 citations · 1.9k across the 51 of their papers we have counts for

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Showing 2010Show all

5 papers · 1 filter

cond-mat.mtrl-sci2010

Amplified Stimulated Terahertz Emission at Room temperature from Optically Pumped Graphene

Stephane Boubanga Tombet, Silvia Chan, Taiichi Otsuji +2

Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow reco…

cond-mat.mes-hall2010

Terahertz surface plasmons in optically pumped graphene structures

A. ~A. ~Dubinov, V. ~Ya. ~Aleshkin, V. ~Mitin +2

We analyze the surface plasmons (SPs) propagating along the optically pumped single-graphene layer (SGL) and multiple-graphene layer (MGL) structures. It is shown that at sufficien…

cond-mat.mes-hall2010★ 17 cited

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

V. Ryzhii, M. Ryzhii, A. Satou +2

We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the ele…

cond-mat.mtrl-sci2010★ 5 cited

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Epitaxial Graphene Heterostructures

Taiichi Otsuji, Hiromi Karasawa, Tsuneyoshi Komori +5

We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pump…

cond-mat.mtrl-sci2010★ 1 cited

Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics

Hirokazu Fukidome, Ryota Takahashi, Yu Miyamoto +8

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among v…