activity
20072018
most citedAnisotropic Magnetoresistance in Manganites: Model and Experiment

29 citations · 68 across the 6 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2018★ 7 cited

Effect of N interstitial complexes on the electronic properties of GaAsN alloys from first principles

J. D. Querales-Flores, C. I. Ventura, J. D. Fuhr

Several approaches have been used to investigate the impact of Nitrogen (N) on the electronic structure of GaAsN alloys, however, there is no agreement between theory…

cond-mat.mtrl-sci2016★ 3 cited

The two gap transitions in GeSn: effect of non-substitutional complex defects

J. D. Querales-Flores, C. I. Ventura, J. D. Fuhr +1

The existence of non-substitutional -Sn defects in GeSn was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B 81, 155204 (2010)], which e…

cond-mat.mtrl-sci2009★ 29 cited

Anisotropic Magnetoresistance in Manganites: Model and Experiment

Javier D. Fuhr, Mara Granada, Laura B. Steren +1

We present measurements of anisotropic magnetoresistance of La_{0.75}Sr_{0.25}MnO_3 films deposited on (001) SrTiO_3 substrates, and develop a model to describe the low temperature…

cond-mat.mtrl-sci2008★ 22 cited

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

C. I. Ventura, J. D. Fuhr, R. A. Barrio

Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples o…

cond-mat.str-el2007

Pressure induced Insulator-Metal transition in LaMnO

Javier D. Fuhr, Blas Alascio, Michel Avignon

The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO at 32 GPa and room temperature, well above the Neel temperat…