C. I. Ventura

activity

19942018

most citedNon-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

22 citations · 110 across the 17 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2018★ 7 cited

Effect of N interstitial complexes on the electronic properties of GaAs $_{1 - x}$ N $_{x}$ alloys from first principles

J. D. Querales-Flores, C. I. Ventura, J. D. Fuhr

Several approaches have been used to investigate the impact of Nitrogen (N) on the electronic structure of GaAs $_{1 - x}$ N $_{x}$ alloys, however, there is no agreement between theory…

cond-mat.mtrl-sci2016★ 3 cited

The two gap transitions in Ge $_{1 - x}$ Sn $_{x}$ : effect of non-substitutional complex defects

J. D. Querales-Flores, C. I. Ventura, J. D. Fuhr +1

The existence of non-substitutional $β$ -Sn defects in Ge $_{1 - x}$ Sn $_{x}$ was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B 81, 155204 (2010)], which e…

cond-mat.mtrl-sci2008★ 22 cited

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

C. I. Ventura, J. D. Fuhr, R. A. Barrio

Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples o…

Effect of N interstitial complexes on the electronic properties of GaAs1−x​Nx​ alloys from first principles

The two gap transitions in Ge1−x​Snx​: effect of non-substitutional complex defects

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

Effect of N interstitial complexes on the electronic properties of GaAs $_{1 - x}$ N $_{x}$ alloys from first principles

The two gap transitions in Ge $_{1 - x}$ Sn $_{x}$ : effect of non-substitutional complex defects