4 papers
High-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC
Qi-Cheng Hu, Ji-Yang Zhou, Shuo Ren +9
Modified divacancies in the 4H polytype of silicon carbide (SiC) exhibit enhanced charge stability and spin addressability at room temperature, making them attractive for quantum a…
Coherent Spin-Photon Interface of single PL6 Color Centers in Silicon Carbide
Zhen-Xuan He, GergÅ Thiering, Rui-Jian Liang +10
The PL6 color center in silicon carbide has recently emerged as a promising platform for quantum information processing, yet its coherent spin--photon interface has remained largel…
Decoherence-protected entangling gates in a silicon carbide quantum node
Shuo Ren, Rui-Jian Liang, Zhen-Xuan He +8
Solid-state color centers are promising candidates for nodes in quantum network architectures. However, realizing scalable and fully functional quantum nodes, comprising both proce…
Laser writing and spin control of near infrared emitters in silicon carbide
Zhi-He Hao, Zhen-Xuan He, Jovan Maksimovic +6
Near infrared emission in silicon carbide is relevant for quantum technology specifically single photon emission and spin qubits for integrated quantum photonics, quantum communica…