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cond-mat.other2006
Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells
M. Prunnila, J. M. Kivioja, J. Ahopelto
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly w…
cond-mat.mtrl-sci2006
Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor
J. M. Kivioja, M. Prunnila, S. Novikov +2
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-te…