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20042024
most citedDirect Band Gaps in Group IV-VI Monolayer Materials: Binary Counterparts of Phosphorene

204 citations · 1.2k across the 37 of their papers we have counts for

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cond-mat.mtrl-sci2021★ 2 cited

Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices

Priyabrata Mudi, Shailesh K. Khamari, Joydipto Bhattacharya +2

GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37As epitaxial layers through…