Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Xiao Jun Chen, Jun-Seo Hwang, Guillaume Perillat-Merceroz +5

Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circ…