2 papers
physics.app-ph2026
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Huaide Zhang, Philipp John, Jingxuan Kang +3
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection h…
cond-mat.mtrl-sci2026
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
YongJin Cho, Changkai Yu, Huili Grace Xing +1
This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680C by molecular beam epitaxy on a Ga-pola…