3 papers
physics.app-ph2026
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Huaide Zhang, Philipp John, Jingxuan Kang +3
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection h…
cond-mat.mtrl-sci2025
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Vladimir M. Kaganer, Domenik Spallek, Philipp John +2
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocat…
cond-mat.mtrl-sci2024
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…