2.7k citations · 13.5k across the 110 of their papers we have counts for
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cond-mat.mes-hall2009★ 138 cited
Correlating the nanostructure and electronic properties of InAs nanowires
M. D. Schroer, J. R. Petta
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect den…
cond-mat.mes-hall2009★ 10 cited
Development and operation of research-scale III-V nanowire growth reactors
M. D. Schroer, S. Y. Xu, A. Bergman +1
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowi…