activity
20082026
most citedElectrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

1.7k citations · 17.5k across the 111 of their papers we have counts for

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Showing 2014Show all

9 papers · 1 filter

cond-mat.supr-con2014★ 20 cited

Magnetic and structural transitions in LaNaFeAs single crystals

J. -Q. Yan, S. Nandi, B. Saparov +10

LaNaFeAs single crystals have been grown out of an NaAs flux in an alumina crucible and characterized by measuring magnetic susceptibility, electrical resis…

cond-mat.str-el2014★ 33 cited

Neutron-scattering measurements of the spin excitations in LaFeAsO and Ba(FeCo)As: Evidence for a sharp enhancement of spin fluctuations by nematic order

Qiang Zhang, Rafael M. Fernandes, Jagat Lamsal +11

Inelastic neutron scattering was employed to investigate the impact of electronic nematic order on the magnetic spectra of LaFeAsO and Ba(FeCo)As. T…

cond-mat.str-el2014★ 12 cited

Correlating Quasi-Electron Relaxation with Quantum Femtosecond Magnetism in the Order Parameter Dynamics of Insulating Manganites

T. Li, A. Patz, P. Lingos +5

Femtosecond (fs)-resolved simultaneous measurements of charge and spin dynamics reveal the coexistence of two different quasi-particle excitations in colossal magneto-resistive (CM…

cond-mat.supr-con2014★ 9 cited

Anisotropic magnetoelastic coupling in single-crystalline CeFeAsO as seen via high-resolution x-ray diffraction

H. -F. Li, J. -Q. Yan, J. W. Kim +3

Single-crystal synchrotron x-ray diffraction studies of CeFeAsO reveal strong anisotropy in the charge correlation lengths along or perpendicular to the in-plane antiferromagnetic…

cond-mat.str-el2014★ 47 cited

Disorder from order among anisotropic next-nearest-neighbor Ising spin chains in SrHoO

J. -J. Wen, W. Tian, V. O. Garlea +7

We describe why Ising spin chains with competing interactions in segregate into ordered and disordered ensembles at low temperatures (). Using elastic neutron sc…

cond-mat.mtrl-sci2014★ 481 cited

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…