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cond-mat.mtrl-sci2025
NiSi as seed layer for epitaxial growth of NiAl and Cr on Si(001)
Mohamed Ben Chroud, Thu-Huong Thi Tran, Johan Swerts +2
In general, metal layers cannot be grown epitaxially on Si due to the tendency of metals to react and form a silicide. Even in case the metal layer has a matching lattice symmetry…
cond-mat.supr-con2025★ 3 cited
Nonvolatile Cryogenic Phase Slip Memory with Single-Shot Readout
Lukas Nulens, Davi A. D. Chaves, Stijn Reniers +6
The demand for cryogenic memory components is driven by the need for ultra-fast, low-power, and highly reliable computing systems. Phase slip-based devices promise to fulfill all t…